BSX62-10
BSX62-10Manufacturer: Central Semiconductor Corp
Categories: Single Bipolar Transistors
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Central Semiconductor Corp BSX62-10 is an NPN bipolar junction transistor designed for demanding applications. This through-hole component, housed in a TO-39 metal can package, offers a collector-emitter breakdown voltage of 40 V and a continuous collector current rating of 3 A. With a maximum power dissipation of 5 W and a transition frequency of 30 MHz, it is suitable for amplifier and switching circuits. Key specifications include a minimum DC current gain (hFE) of 63 at 1 A and 1 V, a collector cutoff current (ICBO) of 100 nA, and a Vce saturation of 800 mV at 200 mA and 2 A. The operating temperature range is -65°C to 200°C (TJ). This transistor finds application in various industrial and commercial electronics, including power control and signal amplification stages.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-205AD, TO-39-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 800mV @ 200mA, 2A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 63 @ 1A, 1V |
| Frequency - Transition | 30MHz |
| Supplier Device Package | TO-39 |
| Current - Collector (Ic) (Max) | 3 A |
| Voltage - Collector Emitter Breakdown (Max) | 40 V |
| Power - Max | 5 W |
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