BSS52
TRANS NPN DARL 80V 1A TO39Manufacturer: Central Semiconductor Corp
Categories: Single Bipolar Transistors
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Central Semiconductor Corp BSS52 is an NPN Darlington bipolar transistor designed for high gain applications. This through-hole component, housed in a TO-39 package (TO-205AD), offers a collector emitter breakdown voltage of 80V and a continuous collector current capability of 1A. The minimum DC current gain (hFE) is 2000 at 500mA and 10V. With a maximum power dissipation of 800mW and a saturation voltage of 1.6V at 4mA/1A, it is suitable for power switching and amplification circuits. The device operates across a temperature range of -65°C to 200°C. Typical applications include power control and general-purpose amplification in industrial and consumer electronics.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-205AD, TO-39-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | NPN - Darlington |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.6V @ 4mA, 1A |
| Current - Collector Cutoff (Max) | 50nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 2000 @ 500mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | TO-39 |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 800 mW |
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