BFX87 TIN/LEAD
TRANSISTORManufacturer: Central Semiconductor Corp
Categories: Single Bipolar Transistors
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Central Semiconductor Corp BFX87-TIN-LEAD is a PNP bipolar junction transistor (BJT) designed for high-temperature applications. This through-hole TO-39 packaged device offers a collector-emitter breakdown voltage of 50 V and a continuous collector current capability of up to 600 mA. Key electrical characteristics include a maximum power dissipation of 600 mW, a minimum DC current gain (hFE) of 40 at 150 mA and 10 V, and a transition frequency of 360 MHz. The transistor exhibits a Vce(sat) of 400 mV at 15 mA base current and 150 mA collector current. With an operating junction temperature of 200°C, this component is suitable for use in demanding industrial and commercial applications where elevated temperatures are a factor.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-205AD, TO-39-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 15mA, 150mA |
| Current - Collector Cutoff (Max) | 500nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 150mA, 10V |
| Frequency - Transition | 360MHz |
| Supplier Device Package | TO-39 |
| Current - Collector (Ic) (Max) | 600 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 600 mW |
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