BCW81 TR
BCW81 TRManufacturer: Central Semiconductor Corp
Categories: Single Bipolar Transistors
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Central Semiconductor Corp BCW81-TR is an NPN Bipolar Junction Transistor (BJT). This surface mount device, packaged in a SOT-23, offers a collector-emitter breakdown voltage of 45V and a transition frequency of 60MHz. It features a maximum power dissipation of 350mW and a minimum DC current gain (hFE) of 420 at 2mA collector current and 5V collector-emitter voltage. The collector cutoff current (ICBO) is specified at a maximum of 100nA. This component is suitable for applications in consumer electronics and general-purpose amplification circuits.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | - |
| Vce Saturation (Max) @ Ib, Ic | - |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 420 @ 2mA, 5V |
| Frequency - Transition | 60MHz |
| Supplier Device Package | SOT-23 |
| Voltage - Collector Emitter Breakdown (Max) | 45 V |
| Power - Max | 350 mW |
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