2N6468
TRANSISTORManufacturer: Central Semiconductor Corp
Categories: Single Bipolar Transistors
Quality Control: Learn More
Central Semiconductor Corp's 2N6468 is a bipolar junction transistor (BJT) designed for robust performance. This NPN transistor features a collector-emitter breakdown voltage of 120V and a continuous collector current capability of 4A. With a power dissipation of 40W and a transition frequency of 5MHz, it is well-suited for power switching and amplification applications. The minimum DC current gain (hFE) is 15 at 1.5A and 4V. Saturation voltage (Vce(sat)) is a maximum of 4V at 800mA collector current and corresponding base drive. The transistor operates within a temperature range of -65°C to 200°C and is housed in a TO-66 package, facilitating through-hole mounting. This component finds utility in industrial control systems and power management circuits.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-213AA, TO-66-2 |
| Mounting Type | Through Hole |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 4V @ 800mA, 4A |
| Current - Collector Cutoff (Max) | 1mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 15 @ 1.5A, 4V |
| Frequency - Transition | 5MHz |
| Supplier Device Package | TO-66 |
| Current - Collector (Ic) (Max) | 4 A |
| Voltage - Collector Emitter Breakdown (Max) | 120 V |
| Power - Max | 40 W |
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