2N6467
TRANSISTORManufacturer: Central Semiconductor Corp
Categories: Single Bipolar Transistors
Quality Control: Learn More
Central Semiconductor Corp's 2N6467 is a high-performance NPN bipolar junction transistor (BJT) housed in a TO-66 package. This through-hole component offers a robust 100V collector-emitter breakdown voltage and a maximum collector current of 4A, suitable for demanding power switching and amplification applications. With a transition frequency of 5MHz and a maximum power dissipation of 40W, the 2N6467 is engineered for reliability in industrial control, power supply, and automotive systems. The TO-66 (TO-213AA) package facilitates efficient heat dissipation and straightforward board mounting.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-213AA, TO-66-2 |
| Mounting Type | Through Hole |
| Operating Temperature | - |
| Vce Saturation (Max) @ Ib, Ic | - |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - |
| Frequency - Transition | 5MHz |
| Supplier Device Package | TO-66 |
| Current - Collector (Ic) (Max) | 4 A |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Power - Max | 40 W |
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