2N6052 PBFREE
TRANS PNP 100V 12A TO3Manufacturer: Central Semiconductor Corp
Categories: Single Bipolar Transistors
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Central Semiconductor Corp's 2N6052-PBFREE is a PNP bipolar junction transistor (BJT) designed for robust power applications. This component features a 100V collector-emitter breakdown voltage and a maximum continuous collector current of 12A, with a power dissipation capability of 150W. The device exhibits a high DC current gain (hFE) of 750 minimum at 6A and 3V, and a transition frequency of 4MHz. Its saturation voltage is specified at 3V maximum for 120mA base current and 12A collector current. The 2N6052-PBFREE is housed in a TO-3 (TO-204AA) package, suitable for through-hole mounting, and operates within an extended temperature range of -65°C to 200°C. This transistor is commonly utilized in industrial power supplies, audio amplification, and general-purpose switching circuits.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-204AA, TO-3 |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 3V @ 120mA, 12A |
| Current - Collector Cutoff (Max) | 1mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 750 @ 6A, 3V |
| Frequency - Transition | 4MHz |
| Supplier Device Package | TO-3 |
| Current - Collector (Ic) (Max) | 12 A |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Power - Max | 150 W |
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