2N5885 PBFREE
TRANS NPN 60V 25A TO3Manufacturer: Central Semiconductor Corp
Categories: Single Bipolar Transistors
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Central Semiconductor Corp's 2N5885-PBFREE is an NPN bipolar junction transistor (BJT) designed for high-power applications. This through-hole component features a collector-emitter breakdown voltage of 60V and a maximum continuous collector current of 25A. With a power dissipation capability of 200W and a transition frequency of 4MHz, the 2N5885-PBFREE is suitable for demanding power switching and amplification tasks. Key specifications include a minimum DC current gain (hFE) of 20 at 10A and 4V, and a maximum collector-emitter saturation voltage of 4V at 6.25A and 25A. The device operates within an extended temperature range of -65°C to 200°C (TJ) and is housed in a TO-3 (TO-204AA) package. This transistor finds application in power supplies, motor control, and audio amplification circuits within industrial and consumer electronics sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-204AA, TO-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 4V @ 6.25A, 25A |
| Current - Collector Cutoff (Max) | 2mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 10A, 4V |
| Frequency - Transition | 4MHz |
| Supplier Device Package | TO-3 |
| Current - Collector (Ic) (Max) | 25 A |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Power - Max | 200 W |
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