2N5771 TRE
TRANS PNP 15V 0.05A TO92Manufacturer: Central Semiconductor Corp
Categories: Single Bipolar Transistors
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Central Semiconductor Corp PNP Bipolar Junction Transistor, part number 2N5771-TRE. This device features a 15V collector-emitter breakdown voltage and a maximum collector current of 50mA. With a transition frequency of 850MHz and a power dissipation capability of 625mW, it is suitable for applications requiring moderate switching speeds and signal amplification. The DC current gain (hFE) is a minimum of 50 at 10mA collector current and 300mV Vce. Collector cutoff current is rated at a maximum of 10nA, and Vce saturation is 600mV at 5mA base current and 50mA collector current. The 2N5771-TRE is housed in a through-hole TO-92 package (TO-226AA) and operates within a temperature range of -65°C to 150°C. This component finds application in general-purpose switching and amplification circuits across various electronic systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | 10nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 10mA, 300mV |
| Frequency - Transition | 850MHz |
| Supplier Device Package | TO-92 |
| Current - Collector (Ic) (Max) | 50 mA |
| Voltage - Collector Emitter Breakdown (Max) | 15 V |
| Power - Max | 625 mW |
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