2N4299
TRANSISTORManufacturer: Central Semiconductor Corp
Categories: Single Bipolar Transistors
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Central Semiconductor Corp's 2N4299 is a high-power bipolar junction transistor (BJT) designed for demanding applications. This NPN transistor features a 250V collector-emitter breakdown voltage and a continuous collector current capability of 1A, with a maximum power dissipation of 20W. The 2N4299 offers a minimum DC current gain (hFE) of 50 at 50mA and 10V, and a transition frequency of 20MHz. Its low saturation voltage of 750mV at 5mA base current and 50mA collector current ensures efficient operation. The device is housed in a TO-66 package for through-hole mounting, providing robust thermal performance suitable for industrial controls, power supplies, and audio amplification circuits. Operating temperature range is -65°C to 175°C.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-213AA, TO-66-2 |
| Mounting Type | Through Hole |
| Operating Temperature | -65°C ~ 175°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 750mV @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | 600µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 50mA, 10V |
| Frequency - Transition | 20MHz |
| Supplier Device Package | TO-66 |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 250 V |
| Power - Max | 20 W |
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