2N4250A
TRANS PNP 60V TO126Manufacturer: Central Semiconductor Corp
Categories: Single Bipolar Transistors
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Central Semiconductor Corp's 2N4250A is a PNP bipolar junction transistor (BJT) designed for electronic applications. This device features a collector-emitter breakdown voltage of 60 V and a maximum power dissipation of 200 mW. The 2N4250A is housed in a TO-126 package, facilitating through-hole mounting. It exhibits a minimum DC current gain (hFE) of 250 at 100µA and 5V, with a Vce(sat) of 250mV at 500µA and 10mA. The collector cutoff current (ICBO) is specified at a maximum of 10nA. Operating temperature ranges from -55°C to 150°C. This component is suitable for use in various industries including industrial controls and consumer electronics.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-225AA, TO-126-3 |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 10nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 250 @ 100µA, 5V |
| Frequency - Transition | - |
| Supplier Device Package | TO-126 |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Power - Max | 200 mW |
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