2N4137
TRANS 20V 0.2A TO18Manufacturer: Central Semiconductor Corp
Categories: Single Bipolar Transistors
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Central Semiconductor Corp's 2N4137 is a bipolar junction transistor (BJT) designed for applications requiring robust performance in a TO-18 package. This NPN transistor offers a collector-emitter breakdown voltage of 20V and a maximum continuous collector current of 200mA. With a transition frequency of 500MHz, it is suitable for signal amplification and switching in various electronic systems. The device features a maximum power dissipation of 360mW and a low collector cutoff current of 400nA. DC current gain (hFE) is specified at a minimum of 40 at 10mA collector current and 1V collector-emitter voltage. Operating temperature ranges from -65°C to 200°C. This component finds application in industrial control systems, telecommunications, and consumer electronics.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BoxDownload Free CAD Model:
Technical Details:
| Packaging | Box |
| Package / Case | TO-206AA, TO-18-3 Metal Can |
| Mounting Type | Through Hole |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 10mA, 100mA |
| Current - Collector Cutoff (Max) | 400nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 10mA, 1V |
| Frequency - Transition | 500MHz |
| Supplier Device Package | TO-18 |
| Current - Collector (Ic) (Max) | 200 mA |
| Voltage - Collector Emitter Breakdown (Max) | 20 V |
| Power - Max | 360 mW |
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