2N3716 PBFREE
TRANS NPN 80V 10A TO3Manufacturer: Central Semiconductor Corp
Categories: Single Bipolar Transistors
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Central Semiconductor Corp 2N3716-PBFREE is an NPN bipolar junction transistor (BJT) designed for robust power switching applications. This component offers a collector-emitter breakdown voltage of 80V and a continuous collector current capability of 10A, with a maximum power dissipation of 150W. It features a transition frequency of 4MHz and a minimum DC current gain (hFE) of 50 at 1A collector current and 2V collector-emitter voltage. The saturation voltage (Vce(sat)) is specified at a maximum of 800mV for a 500mA base current and 5A collector current. This device is housed in the industry-standard TO-3 (TO-204AA) package, facilitating through-hole mounting. The 2N3716-PBFREE is suitable for use in power supply regulation, switching power supplies, and general-purpose amplification in industrial and consumer electronics.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-204AA, TO-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 800mV @ 500mA, 5A |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 1A, 2V |
| Frequency - Transition | 4MHz |
| Supplier Device Package | TO-3 |
| Current - Collector (Ic) (Max) | 10 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 150 W |
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