2N3646
TRANS NPN 15V 0.2A TO106Manufacturer: Central Semiconductor Corp
Categories: Single Bipolar Transistors
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Central Semiconductor Corp's 2N3646 is an NPN bipolar junction transistor designed for general-purpose switching and amplification applications. This through-hole component features a collector-emitter breakdown voltage of 15V and a continuous collector current capability of 200mA. The device offers a transition frequency of 350MHz, making it suitable for various RF and high-frequency circuits. With a maximum power dissipation of 200mW, the 2N3646 is housed in a TO-106 package. Its minimum DC current gain (hFE) is 30 at 30mA collector current and 400mV collector-emitter voltage. The saturation voltage (Vce Sat) is a maximum of 500mV at 30mA base current and 300mA collector current, with a collector cutoff current of 500nA. This component finds utility in consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-106-3 Domed |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 30mA, 300mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 30mA, 400mV |
| Frequency - Transition | 350MHz |
| Supplier Device Package | TO-106 |
| Current - Collector (Ic) (Max) | 200 mA |
| Voltage - Collector Emitter Breakdown (Max) | 15 V |
| Power - Max | 200 mW |
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