2N3585 PBFREE
TRANS NPN 300V 2A TO-66Manufacturer: Central Semiconductor Corp
Categories: Single Bipolar Transistors
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Central Semiconductor Corp's 2N3585-PBFREE is an NPN bipolar junction transistor (BJT) designed for demanding applications. This through-hole component, housed in a TO-66 package (TO-213AA), offers a high collector-emitter breakdown voltage of 300V and a maximum continuous collector current of 2A. With a power dissipation capability of 35W and a transition frequency of 10MHz, it is suitable for power switching and amplification circuits. Key electrical characteristics include a minimum DC current gain (hFE) of 25 at 1A, 10V, and a saturation voltage (Vce Sat) of 750mV at 125mA, 1A. The 2N3585-PBFREE operates across a wide temperature range of -65°C to 200°C. This component finds utility in industrial power control and high-voltage switching applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-213AA, TO-66-2 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 750mV @ 125mA, 1A |
| Current - Collector Cutoff (Max) | 5mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 25 @ 1A, 10V |
| Frequency - Transition | 10MHz |
| Supplier Device Package | TO-66 |
| Current - Collector (Ic) (Max) | 2 A |
| Voltage - Collector Emitter Breakdown (Max) | 300 V |
| Power - Max | 35 W |
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