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2N3563

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2N3563

TRANS NPN 12V TO106

Manufacturer: Central Semiconductor Corp

Categories: Single Bipolar Transistors

Quality Control: Learn More

Central Semiconductor Corp's 2N3563 is an NPN bipolar junction transistor (BJT) featuring a collector-emitter breakdown voltage of 12V and a transition frequency of 600MHz. This component is housed in a TO-106 package, facilitating through-hole mounting. With a minimum DC current gain (hFE) of 20 at 8mA and 10V, and a collector cutoff current (ICBO) of 50nA, the 2N3563 is suitable for various applications including general-purpose amplification and switching circuits. Its performance characteristics make it relevant for use in industrial, consumer, and telecommunications equipment. The device is supplied in bulk packaging.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-106-3 Domed
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature-
Vce Saturation (Max) @ Ib, Ic-
Current - Collector Cutoff (Max)50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce20 @ 8mA, 10V
Frequency - Transition600MHz
Supplier Device PackageTO-106
Voltage - Collector Emitter Breakdown (Max)12 V

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