2N3120 TIN/LEAD
TRANSISTORManufacturer: Central Semiconductor Corp
Categories: Single Bipolar Transistors
Quality Control: Learn More
Central Semiconductor Corp PNP Bipolar Junction Transistor (BJT) with part number 2N3120-TIN-LEAD. This through-hole device features a collector-emitter breakdown voltage of 45V and a transition frequency of 130MHz. The minimum DC current gain (hFE) is specified at 30 for an Ic of 150mA and Vce of 1V. The device is housed in a TO-39 package, also known as TO-205AD, a 3-lead metal can. The collector cutoff current is a maximum of 10nA. This component is commonly utilized in industrial and commercial applications requiring reliable switching and amplification.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-205AD, TO-39-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | - |
| Vce Saturation (Max) @ Ib, Ic | - |
| Current - Collector Cutoff (Max) | 10nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 150mA, 1V |
| Frequency - Transition | 130MHz |
| Supplier Device Package | TO-39 |
| Voltage - Collector Emitter Breakdown (Max) | 45 V |
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