2N3117 PBFREE
TRANS NPN 60V 0.05A TO18Manufacturer: Central Semiconductor Corp
Categories: Single Bipolar Transistors
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Central Semiconductor Corp NPN Bipolar Junction Transistor, part number 2N3117-PBFREE. This device features a 60V collector-emitter breakdown voltage and a maximum collector current of 50mA. With a power dissipation of 360mW, it is housed in a TO-18 (TO-206AA) metal can package for through-hole mounting. The transistor exhibits a minimum DC current gain (hFE) of 250 at 10µA collector current and 5V collector-emitter voltage. The saturation voltage (Vce(sat)) is 350mV maximum at 100µA base current and 1mA collector current. Operating temperature range is from -65°C to 200°C. This component is suitable for applications in industrial and consumer electronics.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-206AA, TO-18-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 350mV @ 100µA, 1mA |
| Current - Collector Cutoff (Max) | 10nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 250 @ 10µA, 5V |
| Frequency - Transition | - |
| Supplier Device Package | TO-18 |
| Current - Collector (Ic) (Max) | 50 mA |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Power - Max | 360 mW |
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