2N3072 TIN/LEAD
TRANSISTORManufacturer: Central Semiconductor Corp
Categories: Single Bipolar Transistors
Quality Control: Learn More
Central Semiconductor Corp PNP Bipolar Junction Transistor (BJT), part number 2N3072-TIN-LEAD. This through-hole component features a TO-39 package and is designed for general-purpose amplification and switching applications. It offers a collector-emitter breakdown voltage of 60V and a transition frequency of 130MHz. The device exhibits a minimum DC current gain (hFE) of 30 at 50mA collector current and 1V collector-emitter voltage. The maximum collector cutoff current is specified at 10nA. This transistor is suitable for use in industrial control systems, power management circuits, and consumer electronics. The packaging format is bulk.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-205AD, TO-39-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | - |
| Vce Saturation (Max) @ Ib, Ic | - |
| Current - Collector Cutoff (Max) | 10nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 50mA, 1V |
| Frequency - Transition | 130MHz |
| Supplier Device Package | TO-39 |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
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