2N2221A PBFREE
TRANS NPN 40V 0.8A TO18Manufacturer: Central Semiconductor Corp
Categories: Single Bipolar Transistors
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Central Semiconductor Corp NPN Bipolar Junction Transistor, part number 2N2221A-PBFREE. This device features a 40V collector-emitter breakdown voltage and a maximum collector current of 800mA. With a transition frequency of 250MHz and a maximum power dissipation of 1.8W, it is suitable for applications requiring moderate switching speeds and power handling. The DC current gain (hFE) is a minimum of 40 at 150mA and 10V. It exhibits a Vce(sat) of 1V at 50mA/500mA and a collector cutoff current (ICBO) of 10nA. The transistor is housed in a TO-18 (TO-206AA) metal can package and is designed for through-hole mounting. Operating temperature range is -65°C to 200°C. This component is commonly utilized in general-purpose amplification and switching circuits across various industrial and consumer electronics sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-206AA, TO-18-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 10nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 150mA, 10V |
| Frequency - Transition | 250MHz |
| Supplier Device Package | TO-18 |
| Current - Collector (Ic) (Max) | 800 mA |
| Voltage - Collector Emitter Breakdown (Max) | 40 V |
| Power - Max | 1.8 W |
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