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2N2218A PBFREE

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2N2218A PBFREE

TRANS NPN 40V 0.8A TO-39

Manufacturer: Central Semiconductor Corp

Categories: Single Bipolar Transistors

Quality Control: Learn More

Central Semiconductor Corp's 2N2218A-PBFREE is an NPN bipolar junction transistor (BJT) designed for through-hole mounting in a TO-39 package. This device offers a collector-emitter breakdown voltage of 40V and a continuous collector current capability of 800mA. Key electrical characteristics include a minimum DC current gain (hFE) of 40 at 150mA and 10V, a transition frequency of 250MHz, and a maximum power dissipation of 800mW. Saturation voltage (Vce(sat)) is specified at 1V maximum for an operating point of 50mA base current and 500mA collector current. The collector cutoff current (ICBO) is a maximum of 10nA. This transistor operates across a junction temperature range of -65°C to 200°C. Applications for this component are found in industrial controls, power management, and general-purpose amplification circuits.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-205AD, TO-39-3 Metal Can
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature-65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic1V @ 50mA, 500mA
Current - Collector Cutoff (Max)10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 150mA, 10V
Frequency - Transition250MHz
Supplier Device PackageTO-39
Current - Collector (Ic) (Max)800 mA
Voltage - Collector Emitter Breakdown (Max)40 V
Power - Max800 mW

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