2N2218A PBFREE
TRANS NPN 40V 0.8A TO-39Manufacturer: Central Semiconductor Corp
Categories: Single Bipolar Transistors
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Central Semiconductor Corp's 2N2218A-PBFREE is an NPN bipolar junction transistor (BJT) designed for through-hole mounting in a TO-39 package. This device offers a collector-emitter breakdown voltage of 40V and a continuous collector current capability of 800mA. Key electrical characteristics include a minimum DC current gain (hFE) of 40 at 150mA and 10V, a transition frequency of 250MHz, and a maximum power dissipation of 800mW. Saturation voltage (Vce(sat)) is specified at 1V maximum for an operating point of 50mA base current and 500mA collector current. The collector cutoff current (ICBO) is a maximum of 10nA. This transistor operates across a junction temperature range of -65°C to 200°C. Applications for this component are found in industrial controls, power management, and general-purpose amplification circuits.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-205AD, TO-39-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 10nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 150mA, 10V |
| Frequency - Transition | 250MHz |
| Supplier Device Package | TO-39 |
| Current - Collector (Ic) (Max) | 800 mA |
| Voltage - Collector Emitter Breakdown (Max) | 40 V |
| Power - Max | 800 mW |