2N1131 PBFREE
TRANS PNP 50V 0.6A TO39Manufacturer: Central Semiconductor Corp
Categories: Single Bipolar Transistors
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Central Semiconductor Corp's 2N1131-PBFREE is a PNP bipolar junction transistor designed for robust performance in demanding applications. Featuring a 50V collector-emitter breakdown voltage and a maximum collector current of 600mA, this device offers a transition frequency of 50MHz. The 2N1131-PBFREE is packaged in a TO-39 (TO-205AD) metal can, suitable for through-hole mounting. Its power dissipation capability is rated at 2W, and it operates across a temperature range of -65°C to 200°C. Typical applications include power switching and amplification circuits within industrial and consumer electronics. The device exhibits a minimum DC current gain (hFE) of 20 at 150mA and 10V, with a Vce saturation of 1.5V at 15mA base current and 150mA collector current. Collector cutoff current is a maximum of 100µA (ICBO).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-205AD, TO-39-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 15mA, 150mA |
| Current - Collector Cutoff (Max) | 100µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 150mA, 10V |
| Frequency - Transition | 50MHz |
| Supplier Device Package | TO-39 |
| Current - Collector (Ic) (Max) | 600 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 2 W |
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