CTLDM304P-M832DS TR
MOSFET 2P-CH 30V 4.2A TLM832DSManufacturer: Central Semiconductor Corp
Categories: FET, MOSFET Arrays
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Central Semiconductor Corp's CTLDM304P-M832DS-TR is a dual P-Channel MOSFET array in a TLM832DS surface mount package. This device features a Drain-to-Source Voltage (Vdss) of 30V and a continuous drain current (Id) of 4.2A at 25°C. The Rds On is specified at a maximum of 70mOhm at 4.2A and 10V, with a maximum power dissipation of 1.65W. Gate charge (Qg) is 6.4nC (Max) at 4.5V, and input capacitance (Ciss) is 760pF (Max) at 15V. The threshold voltage (Vgs(th)) is 1.3V (Max) at 250µA. Operating temperature range is -55°C to 150°C. This component is suitable for applications in consumer electronics and industrial power management. The device is supplied on tape and reel.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-TDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.65W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 4.2A |
| Input Capacitance (Ciss) (Max) @ Vds | 760pF @ 15V |
| Rds On (Max) @ Id, Vgs | 70mOhm @ 4.2A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 6.4nC @ 4.5V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 1.3V @ 250µA |
| Supplier Device Package | TLM832DS |
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