CTLDM303N-M832DS TR
MOSFET 2N-CH 30V 3.6A TLM832DSManufacturer: Central Semiconductor Corp
Categories: FET, MOSFET Arrays
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Central Semiconductor Corp CTLDM303N-M832DS-TR is a 30V, dual N-channel MOSFET array designed for surface mount applications. This component features a continuous drain current (Id) of 3.6A at 25°C and a maximum power dissipation of 1.65W. The Rds On is specified at a maximum of 40mOhm at 1.8A and 4.5V Vgs. Key electrical parameters include a gate charge (Qg) of 13nC maximum at 4.5V and input capacitance (Ciss) of 590pF maximum at 10V Vds. The threshold voltage (Vgs(th)) is a maximum of 1.2V at 250µA. The device operates across a temperature range of -55°C to 150°C and is supplied in an 8-TDFN exposed pad package, presented on tape and reel. This MOSFET array is suitable for use in various automotive and industrial applications requiring efficient switching and power management.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-TDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.65W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 3.6A |
| Input Capacitance (Ciss) (Max) @ Vds | 590pF @ 10V |
| Rds On (Max) @ Id, Vgs | 40mOhm @ 1.8A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 13nC @ 4.5V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 1.2V @ 250µA |
| Supplier Device Package | TLM832DS |
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