CTLDM303N-M832DS BK
MOSFET 2N-CH 30V 3.6A TLM832DSManufacturer: Central Semiconductor Corp
Categories: FET, MOSFET Arrays
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Central Semiconductor Corp CTLDM303N-M832DS-BK is a dual N-channel MOSFET array designed for high-efficiency switching applications. This component features a 30V Drain-to-Source voltage rating and a continuous drain current capability of 3.6A at 25°C ambient. With a low on-resistance of 40mOhm maximum at 1.8A and 4.5V Vgs, it minimizes conduction losses. The device offers a gate charge of 13nC maximum at 4.5V and an input capacitance of 590pF maximum at 10V Vds. Operating across a temperature range of -55°C to 150°C, it is housed in an 8-TDFN exposed pad package (TLM832DS) suitable for surface mounting. The maximum power dissipation is 1.65W. This MOSFET array finds application in power management circuits and portable electronics.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 8-TDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.65W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 3.6A (Ta) |
| Input Capacitance (Ciss) (Max) @ Vds | 590pF @ 10V |
| Rds On (Max) @ Id, Vgs | 40mOhm @ 1.8A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 13nC @ 4.5V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 1.25V @ 250µA |
| Supplier Device Package | TLM832DS |
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