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MPQ3725A TIN/LEAD

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MPQ3725A TIN/LEAD

TRANS 4NPN 50V 1A

Manufacturer: Central Semiconductor Corp

Categories: Bipolar Transistor Arrays

Quality Control: Learn More

Central Semiconductor Corp MPQ3725A-TIN-LEAD is a quad NPN bipolar junction transistor (BJT) array packaged in a TO-116 (14-DIP) form factor. This through-hole component offers a collector-emitter breakdown voltage of 50V and a continuous collector current capability of 1A per transistor. The device features a transition frequency of 200MHz and a maximum power dissipation of 1W. With a minimum DC current gain (hFE) of 30 at 500mA and 2V, and a saturation voltage (Vce(sat)) of 450mV at 50mA and 500mA, it is suitable for applications requiring multiple switching or amplification elements. The operating temperature range is -65°C to 150°C. This component finds application in various industrial and consumer electronics requiring compact, multi-transistor solutions.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / Case14-DIP (0.300"", 7.62mm)
Mounting TypeThrough Hole
Transistor Type4 NPN (Quad)
Operating Temperature-65°C ~ 150°C (TJ)
Power - Max1W
Current - Collector (Ic) (Max)1A
Voltage - Collector Emitter Breakdown (Max)50V
Vce Saturation (Max) @ Ib, Ic450mV @ 50mA, 500mA
Current - Collector Cutoff (Max)500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 500mA, 2V
Frequency - Transition200MHz
Supplier Device PackageTO-116

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