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MPQ2369 TIN/LEAD

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MPQ2369 TIN/LEAD

TRANS 4NPN 15V 0.5A

Manufacturer: Central Semiconductor Corp

Categories: Bipolar Transistor Arrays

Quality Control: Learn More

Central Semiconductor Corp MPQ2369-TIN-LEAD is a high-performance Bipolar Junction Transistor (BJT) array featuring four NPN transistors. This device offers a 15V collector-emitter breakdown voltage and a maximum collector current of 500mA, suitable for applications requiring precise current control. The transistor array operates with a minimum DC current gain (hFE) of 20 at 100mA and 2V, and a transition frequency of 450MHz. Its low saturation voltage of 250mV at 1mA/10mA ensures efficient switching. The MPQ2369-TIN-LEAD is packaged in a TO-116 (14-DIP) through-hole configuration, designed for robust mounting. With a maximum power dissipation of 500mW and an operating temperature range of -65°C to 150°C, it is well-suited for use in industrial automation, consumer electronics, and telecommunications equipment.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / Case14-DIP (0.300"", 7.62mm)
Mounting TypeThrough Hole
Transistor Type4 NPN (Quad)
Operating Temperature-65°C ~ 150°C (TJ)
Power - Max500mW
Current - Collector (Ic) (Max)500mA
Voltage - Collector Emitter Breakdown (Max)15V
Vce Saturation (Max) @ Ib, Ic250mV @ 1mA, 10mA
Current - Collector Cutoff (Max)400nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce20 @ 100mA, 2V
Frequency - Transition450MHz
Supplier Device PackageTO-116

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