MD918B
TRANS 2NPN 50MA 15V TO78-6Manufacturer: Central Semiconductor Corp
Categories: Bipolar Transistor Arrays
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Central Semiconductor Corp MD918B is a dual NPN bipolar junction transistor (BJT) array housed in a TO-78-6 metal can package. This device offers a collector-emitter breakdown voltage of 15V and a continuous collector current capability of 50mA. With a transition frequency of 600MHz and a maximum power dissipation of 2W, the MD918B is suitable for applications requiring precise switching and amplification. The minimum DC current gain (hFE) is 50 at 3mA collector current and 5V collector-emitter voltage. The saturation voltage (Vce(sat)) is a maximum of 900mV at 1mA base current and 10mA collector current. Operating temperature ranges from -65°C to 200°C. This component is commonly utilized in aerospace, defense, and industrial control systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-78-6 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | 2 NPN (Dual) |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Power - Max | 2W |
| Current - Collector (Ic) (Max) | 50mA |
| Voltage - Collector Emitter Breakdown (Max) | 15V |
| Vce Saturation (Max) @ Ib, Ic | 900mV @ 1mA, 10mA |
| Current - Collector Cutoff (Max) | 10nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 3mA, 5V |
| Frequency - Transition | 600MHz |
| Supplier Device Package | TO-78-6 |
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