Home

Products

Discrete Semiconductor Products

Transistors

Bipolar (BJT)

Bipolar Transistor Arrays

CTLM7410-M832D TR

Banner
productimage

CTLM7410-M832D TR

TRANSISTOR

Manufacturer: Central Semiconductor Corp

Categories: Bipolar Transistor Arrays

Quality Control: Learn More

Central Semiconductor Corp CTLM7410-M832D-TR is a bipolar junction transistor (BJT) array featuring two independent PNP transistors. This component is housed in an 8-TDFN exposed pad package (TLM832D) and is supplied on a Tape & Reel (TR). It offers a collector-emitter breakdown voltage of 25V and a maximum collector current of 1A. The device exhibits a transition frequency of 100MHz and a maximum power dissipation of 1.65W. Key parameters include a minimum DC current gain (hFE) of 100 at 500mA and 1V, and a Vce saturation of 450mV at 100mA and 1A. The operating temperature range is from -65°C to 150°C. This transistor array is suitable for applications in power management, signal amplification, and switching circuits across various industrial and consumer electronics sectors.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-TDFN Exposed Pad
Mounting TypeSurface Mount
Transistor Type2 PNP (Dual)
Operating Temperature-65°C ~ 150°C (TJ)
Power - Max1.65W
Current - Collector (Ic) (Max)1A
Voltage - Collector Emitter Breakdown (Max)25V
Vce Saturation (Max) @ Ib, Ic450mV @ 100mA, 1A
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 500mA, 1V
Frequency - Transition100MHz
Supplier Device PackageTLM832D

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

CAPTCHA

Clients Also Buy
product image
MPQ2484 TIN/LEAD

TRANS 4NPN 40V

product image
CMKT3920 TR PBFREE

TRANS 2NPN 60V 0.2A SOT363

product image
CMLT2222AG TR PBFREE

TRANS 2NPN 40V 0.6A SOT563