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CTLM3474-M832D TR

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CTLM3474-M832D TR

TRANSISTOR

Manufacturer: Central Semiconductor Corp

Categories: Bipolar Transistor Arrays

Quality Control: Learn More

Central Semiconductor Corp CTLM3474-M832D-TR is a Bipolar Junction Transistor (BJT) array featuring one NPN and one PNP transistor. This device is designed for surface mount applications and comes in a TLM832D package, delivered on tape and reel. It supports a collector current of up to 1A and a collector-emitter breakdown voltage of 25V. The transistor array exhibits a minimum DC current gain (hFE) of 100 at 500mA and 1V, with a transition frequency of 100MHz. Maximum power dissipation is rated at 1.65W. The CTLM3474-M832D-TR is suitable for applications requiring compact, high-performance transistor solutions in industries such as consumer electronics and industrial automation. Operating temperature range is from -65°C to 150°C.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-TDFN Exposed Pad
Mounting TypeSurface Mount
Transistor Type1 NPN, 1 PNP
Operating Temperature-65°C ~ 150°C (TJ)
Power - Max1.65W
Current - Collector (Ic) (Max)1A
Voltage - Collector Emitter Breakdown (Max)25V
Vce Saturation (Max) @ Ib, Ic450mV @ 100mA, 1A
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 500mA, 1V
Frequency - Transition100MHz
Supplier Device PackageTLM832D

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