2N4016
TRANS 2PNP 300MA 60V TO78-6Manufacturer: Central Semiconductor Corp
Categories: Bipolar Transistor Arrays
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Central Semiconductor Corp's 2N4016 is a bipolar junction transistor (BJT) array featuring two PNP transistors. This component offers a collector-emitter breakdown voltage of 60V and a maximum collector current of 300mA for each transistor. With a transition frequency of 200MHz and a power dissipation of 600mW, the 2N4016 is suitable for amplification and switching applications. The minimum DC current gain (hFE) is 135 at 1mA collector current and 5V collector-emitter voltage. Packaged in a TO-78-6 metal can, this dual PNP transistor array is designed for through-hole mounting. It finds application in various industrial and consumer electronics, including signal processing and control systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-78-6 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | 2 PNP (Dual) |
| Operating Temperature | - |
| Power - Max | 600mW |
| Current - Collector (Ic) (Max) | 300mA |
| Voltage - Collector Emitter Breakdown (Max) | 60V |
| Vce Saturation (Max) @ Ib, Ic | - |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 135 @ 1mA, 5V |
| Frequency - Transition | 200MHz |
| Supplier Device Package | TO-78-6 |
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