2N2916A
TRANS 2NPN 30MA 45V TO78-6Manufacturer: Central Semiconductor Corp
Categories: Bipolar Transistor Arrays
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Central Semiconductor Corp 2N2916A is a dual NPN bipolar junction transistor array. This device features a collector-emitter breakdown voltage of 45V and a maximum collector current of 30mA. The transition frequency is specified at 60MHz, with a minimum DC current gain (hFE) of 150 guaranteed at 10µA collector current and 5V collector-emitter voltage. Power dissipation is rated at 600mW. The transistor array is housed in a TO-78-6 metal can package, designed for through-hole mounting. This component finds application in various industrial and commercial electronic systems requiring matched transistor performance.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-78-6 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | 2 NPN (Dual) |
| Operating Temperature | - |
| Power - Max | 600mW |
| Current - Collector (Ic) (Max) | 30mA |
| Voltage - Collector Emitter Breakdown (Max) | 45V |
| Vce Saturation (Max) @ Ib, Ic | - |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 150 @ 10µA, 5V |
| Frequency - Transition | 60MHz |
| Supplier Device Package | TO-78-6 |
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