2N2915
TRANS 2NPN 30MA 45V TO78-6Manufacturer: Central Semiconductor Corp
Categories: Bipolar Transistor Arrays
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The Central Semiconductor Corp 2N2915 is a dual NPN bipolar junction transistor (BJT) designed for through-hole mounting in a TO-78-6 metal can package. This component offers a collector-emitter breakdown voltage of 45V and a continuous collector current capability of up to 30mA. Featuring a transition frequency of 60MHz, the 2N2915 exhibits a minimum DC current gain (hFE) of 60 at 10µA collector current and 5V collector-emitter voltage. With a maximum power dissipation of 600mW, this transistor array is suitable for applications in various industrial and consumer electronics, including general-purpose amplification and switching circuits. It is supplied in bulk packaging.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-78-6 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | 2 NPN (Dual) |
| Operating Temperature | - |
| Power - Max | 600mW |
| Current - Collector (Ic) (Max) | 30mA |
| Voltage - Collector Emitter Breakdown (Max) | 45V |
| Vce Saturation (Max) @ Ib, Ic | - |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 10µA, 5V |
| Frequency - Transition | 60MHz |
| Supplier Device Package | TO-78-6 |
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