2N2913
TRANS 2NPN 30MA 45V TO78-6Manufacturer: Central Semiconductor Corp
Categories: Bipolar Transistor Arrays
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Central Semiconductor Corp 2N2913 is a dual NPN bipolar junction transistor (BJT) array. This through-hole component, housed in a TO-78-6 metal can package, offers a collector current (Ic) of 30mA and a collector-emitter breakdown voltage (Vce) of 45V. With a minimum DC current gain (hFE) of 60 at 10µA and 5V, and a transition frequency (fT) of 60MHz, this device is suitable for general-purpose amplification and switching applications. The maximum power dissipation is 600mW. This component finds utility in various electronic systems, including industrial controls and telecommunications.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-78-6 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | 2 NPN (Dual) |
| Operating Temperature | - |
| Power - Max | 600mW |
| Current - Collector (Ic) (Max) | 30mA |
| Voltage - Collector Emitter Breakdown (Max) | 45V |
| Vce Saturation (Max) @ Ib, Ic | - |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 10µA, 5V |
| Frequency - Transition | 60MHz |
| Supplier Device Package | TO-78-6 |
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