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2N2722

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2N2722

TRANS 2NPN 40MA 45V TO78-6

Manufacturer: Central Semiconductor Corp

Categories: Bipolar Transistor Arrays

Quality Control: Learn More

Central Semiconductor Corp's 2N2722 is a dual NPN bipolar junction transistor (BJT) array designed for general-purpose amplification and switching applications. This TO-78-6 packaged device features a collector-emitter breakdown voltage of 45V and a maximum collector current of 40mA. With a transition frequency of 100MHz and a minimum DC current gain (hFE) of 50 at 1µA collector current and 5V collector-emitter voltage, the 2N2722 is suitable for use in various electronic systems. The device dissipates a maximum power of 600mW. This through-hole component is commonly found in industrial automation, consumer electronics, and telecommunications equipment.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-78-6 Metal Can
Mounting TypeThrough Hole
Transistor Type2 NPN (Dual)
Operating Temperature-
Power - Max600mW
Current - Collector (Ic) (Max)40mA
Voltage - Collector Emitter Breakdown (Max)45V
Vce Saturation (Max) @ Ib, Ic-
Current - Collector Cutoff (Max)-
DC Current Gain (hFE) (Min) @ Ic, Vce50 @ 1µA, 5V
Frequency - Transition100MHz
Supplier Device PackageTO-78-6

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