2N2060M
TRANS 2NPN 500MA 60V TO78-6Manufacturer: Central Semiconductor Corp
Categories: Bipolar Transistor Arrays
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Central Semiconductor Corp's 2N2060M is a dual NPN bipolar junction transistor array designed for applications requiring high reliability and performance. This device features a collector current rating of 500mA and a collector-emitter breakdown voltage of 60V. With a transition frequency of 60MHz, it is suitable for general-purpose amplification and switching in industrial and defense sectors. The transistor array offers a minimum DC current gain (hFE) of 50 at 10mA and 5V. It is packaged in a TO-78-6 metal can, a through-hole mounting type, and operates across a temperature range of -65°C to 200°C. The maximum power dissipation is 3W.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-78-6 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | 2 NPN (Dual) |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Power - Max | 3W |
| Current - Collector (Ic) (Max) | 500mA |
| Voltage - Collector Emitter Breakdown (Max) | 60V |
| Vce Saturation (Max) @ Ib, Ic | 1.2V @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | 2nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 10mA, 5V |
| Frequency - Transition | 60MHz |
| Supplier Device Package | TO-78-6 |
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