CP616-2N5160-WN
RF TRANSISTOR TO-39Manufacturer: Central Semiconductor Corp
Categories: Bipolar RF Transistors
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Central Semiconductor Corp's CP616-2N5160-WN is a PNP bipolar RF transistor designed for high-frequency applications. This surface-mount device features a collector-emitter breakdown voltage of 40V and a maximum collector current of 400mA. With a transition frequency of 500MHz and a minimum DC current gain (hFE) of 10 at 50mA and 5V, the CP616-2N5160-WN is suitable for RF amplification and switching circuits. The operating temperature range is -65°C to 150°C (TJ). This component is commonly utilized in telecommunications, radar systems, and other RF circuitry demanding reliable performance. It is supplied in a die package.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Gain | - |
| Power - Max | - |
| Current - Collector (Ic) (Max) | 400mA |
| Voltage - Collector Emitter Breakdown (Max) | 40V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 10 @ 50mA, 5V |
| Frequency - Transition | 500MHz |
| Noise Figure (dB Typ @ f) | - |
| Supplier Device Package | Die |
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