CP616-2N5160-CT
RF TRANSISTOR TO-39Manufacturer: Central Semiconductor Corp
Categories: Bipolar RF Transistors
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Central Semiconductor Corp's CP616-2N5160-CT is a PNP bipolar RF transistor designed for high-frequency applications. This device offers a collector-emitter breakdown voltage of 40V and a maximum collector current of 400mA. With a transition frequency of 500MHz, it is suitable for RF amplification and switching circuits. The minimum DC current gain (hFE) is specified at 10 at 50mA and 5V. The operating temperature range is -65°C to 150°C. This component is supplied as a die for surface mount applications, presented in bulk packaging. It finds utility in various electronic systems requiring robust RF performance.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Gain | - |
| Power - Max | - |
| Current - Collector (Ic) (Max) | 400mA |
| Voltage - Collector Emitter Breakdown (Max) | 40V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 10 @ 50mA, 5V |
| Frequency - Transition | 500MHz |
| Noise Figure (dB Typ @ f) | - |
| Supplier Device Package | Die |
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