CP302-MPSH10-WN
RF TRANS NPNUHF/VHFManufacturer: Central Semiconductor Corp
Categories: Bipolar RF Transistors
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Central Semiconductor Corp NPN RF Transistor, CP302-MPSH10-WN, is a surface-mount bipolar device designed for UHF and VHF applications. This NPN transistor features a collector-emitter breakdown voltage of 25V and a maximum power dissipation of 350mW. It operates across a temperature range of -65°C to 150°C. The device exhibits a minimum DC current gain (hFE) of 60 at 4mA collector current and 10V collector-emitter voltage. With a transition frequency of 650MHz, this component is suitable for use in telecommunications and industrial equipment. The component is supplied as a die in box packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BoxDownload Free CAD Model:
Technical Details:
| Packaging | Box |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Gain | - |
| Power - Max | 350mW |
| Voltage - Collector Emitter Breakdown (Max) | 25V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 4mA, 10V |
| Frequency - Transition | 650MHz |
| Noise Figure (dB Typ @ f) | - |
| Supplier Device Package | Die |
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