Home

Products

Discrete Semiconductor Products

Transistors

Bipolar (BJT)

Bipolar RF Transistors

CP302-MPSH10-CT

Banner
productimage

CP302-MPSH10-CT

RF TRANS NPNUHF/VHF

Manufacturer: Central Semiconductor Corp

Categories: Bipolar RF Transistors

Quality Control: Learn More

Central Semiconductor Corp CP302-MPSH10-CT is an NPN bipolar RF transistor designed for UHF and VHF applications. This surface mount device is supplied as a die, offering maximum flexibility in custom high-frequency circuit designs. Key specifications include a collector-emitter breakdown voltage of 25V, a maximum power dissipation of 350mW, and a transition frequency of 650MHz. The DC current gain (hFE) is a minimum of 60 at 4mA collector current and 10V collector-emitter voltage. It operates across a wide temperature range of -65°C to 150°C. This component is suitable for use in telecommunications, industrial control systems, and medical equipment requiring high-frequency signal amplification and switching.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tray
Technical Details:
PackagingTray
Package / CaseDie
Mounting TypeSurface Mount
Transistor TypeNPN
Operating Temperature-65°C ~ 150°C (TJ)
Gain-
Power - Max350mW
Voltage - Collector Emitter Breakdown (Max)25V
DC Current Gain (hFE) (Min) @ Ic, Vce60 @ 4mA, 10V
Frequency - Transition650MHz
Noise Figure (dB Typ @ f)-
Supplier Device PackageDie

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

CAPTCHA

Clients Also Buy
product image
CEN1107

TRANSISTOR NPN

product image
CP616-2N5160-WN

RF TRANSISTOR TO-39

product image
CP223-2N3866-WN

RF TRANSISTOR TO-39