CP229-2N5109-WN
RF TRANSISTOR TO-39Manufacturer: Central Semiconductor Corp
Categories: Bipolar RF Transistors
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Central Semiconductor Corp CP229-2N5109-WN is an NPN bipolar RF transistor designed for high-frequency applications. This component features a collector current rating of 400mA and a collector-emitter breakdown voltage of 20V. With a transition frequency of 1.2GHz, it offers a typical gain of 11dB at 200MHz and a noise figure of 3dB at the same frequency. The device is supplied as a die, suitable for surface mount integration. Its robust operating temperature range of -65°C to 200°C makes it a reliable choice for demanding environments. This transistor is commonly utilized in RF amplifier and oscillator circuits within the telecommunications and industrial sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Gain | 11dB |
| Power - Max | - |
| Current - Collector (Ic) (Max) | 400mA |
| Voltage - Collector Emitter Breakdown (Max) | 20V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 50mA, 15V |
| Frequency - Transition | 1.2GHz |
| Noise Figure (dB Typ @ f) | 3dB @ 200MHz |
| Supplier Device Package | Die |
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