CP229-2N5109-CT20
RF TRANSISTOR TO-39Manufacturer: Central Semiconductor Corp
Categories: Bipolar RF Transistors
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Central Semiconductor Corp CP229-2N5109-CT20 is an NPN bipolar RF transistor designed for high-frequency applications. This component features a 20V collector-emitter breakdown voltage and a maximum collector current of 400mA. With a transition frequency of 1.2GHz and a typical gain of 11dB, it is suitable for RF amplification stages. The minimum DC current gain (hFE) is 40 at 50mA and 15V. The noise figure is typically 3dB at 200MHz. This device is supplied in a surface mount die package, operating within a temperature range of -65°C to 200°C. It finds application in telecommunications, radar systems, and other high-frequency electronic circuitry.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Gain | 11dB |
| Power - Max | - |
| Current - Collector (Ic) (Max) | 400mA |
| Voltage - Collector Emitter Breakdown (Max) | 20V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 50mA, 15V |
| Frequency - Transition | 1.2GHz |
| Noise Figure (dB Typ @ f) | 3dB @ 200MHz |
| Supplier Device Package | Die |
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