CP229-2N5109-CM
RF TRANSISTOR TO-39Manufacturer: Central Semiconductor Corp
Categories: Bipolar RF Transistors
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Central Semiconductor Corp CP229-2N5109-CM is an NPN bipolar RF transistor designed for high-frequency applications. This component features a 20V collector-emitter breakdown voltage and a maximum collector current of 400mA. With a transition frequency of 1.2GHz and a typical gain of 11dB, the CP229-2N5109-CM is suitable for RF amplification stages. The device exhibits a minimum DC current gain of 40 at 50mA and 15V. Its noise figure is rated at 3dB at 200MHz. The operating temperature range is -65°C to 200°C. This transistor is supplied as a bare die in bulk packaging, intended for surface mount assembly. Applications include RF power amplifiers, mixers, and oscillators in telecommunications and industrial equipment.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Gain | 11dB |
| Power - Max | - |
| Current - Collector (Ic) (Max) | 400mA |
| Voltage - Collector Emitter Breakdown (Max) | 20V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 50mA, 15V |
| Frequency - Transition | 1.2GHz |
| Noise Figure (dB Typ @ f) | 3dB @ 200MHz |
| Supplier Device Package | Die |
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