CP223-2N3866-WN
RF TRANSISTOR TO-39Manufacturer: Central Semiconductor Corp
Categories: Bipolar RF Transistors
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Central Semiconductor Corp CP223-2N3866-WN is a high-frequency NPN bipolar transistor designed for demanding RF applications. This component features a collector current capability of 400mA and a collector-emitter breakdown voltage of 30V. With a transition frequency of 500MHz and a typical gain of 10dB, it is well-suited for amplifier and switching circuits. The device operates across a temperature range of -65°C to 150°C. The CP223-2N3866-WN is provided as a die for surface mount integration, commonly found in telecommunications, radar systems, and industrial control equipment. It offers a minimum DC current gain (hFE) of 10 at 50mA and 5V.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Gain | 10dB |
| Power - Max | - |
| Current - Collector (Ic) (Max) | 400mA |
| Voltage - Collector Emitter Breakdown (Max) | 30V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 10 @ 50mA, 5V |
| Frequency - Transition | 500MHz |
| Noise Figure (dB Typ @ f) | - |
| Supplier Device Package | Die |
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