CM5583
RF TRANSISTOR TO-39Manufacturer: Central Semiconductor Corp
Categories: Bipolar RF Transistors
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Central Semiconductor Corp's CM5583 is a PNP bipolar RF transistor designed for high-frequency applications. This component features a collector current capability of up to 500mA and a collector-emitter breakdown voltage of 30V. With a transition frequency of 1.3GHz and a maximum power dissipation of 1W, it is suitable for demanding RF circuitry. The device exhibits a minimum DC current gain (hFE) of 25 at 100mA and 2V. Packaged in a TO-39 (TO-205AD) metal can for through-hole mounting, the CM5583 operates across a wide temperature range from -65°C to 200°C. This transistor finds application in various RF systems, including telecommunications and industrial control.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-205AD, TO-39-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Gain | - |
| Power - Max | 1W |
| Current - Collector (Ic) (Max) | 500mA |
| Voltage - Collector Emitter Breakdown (Max) | 30V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 25 @ 100mA, 2V |
| Frequency - Transition | 1.3GHz |
| Noise Figure (dB Typ @ f) | - |
| Supplier Device Package | TO-39 |
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