BFW16A
RF TRANSISTOR TO-39Manufacturer: Central Semiconductor Corp
Categories: Bipolar RF Transistors
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Central Semiconductor Corp BFW16A is an NPN bipolar RF transistor designed for high-frequency applications. This component features a collector-emitter breakdown voltage of 25V and a maximum collector current of 150mA. With a transition frequency of 1.2GHz and a power dissipation capability of 1.5W, it is suitable for use in demanding RF power amplification and switching circuits. The device offers a minimum DC current gain (hFE) of 25 at 50mA and 5V. Packaged in a TO-39-3 metal can (TO-205AD) for through-hole mounting, the BFW16A is commonly utilized in telecommunications infrastructure, radar systems, and aerospace and defense electronics.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-205AD, TO-39-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | - |
| Gain | - |
| Power - Max | 1.5W |
| Current - Collector (Ic) (Max) | 150mA |
| Voltage - Collector Emitter Breakdown (Max) | 25V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 25 @ 50mA, 5V |
| Frequency - Transition | 1.2GHz |
| Noise Figure (dB Typ @ f) | - |
| Supplier Device Package | TO-39 |
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