NE6510179A-T1-A
RF MOSFET GAAS HJ-FET 3.5V 79AManufacturer: CEL
Categories: RF FETs, MOSFETs
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CEL NE6510179A-T1-A RF MOSFET, utilizing GaAs HJ-FET technology, is engineered for high-frequency applications up to 1.9GHz. This component delivers a typical gain of 10dB and an output power of 32.5dBm at a test current of 200mA and a test voltage of 3.5V. The device is supplied in a 4-SMD, Flat Leads package, presented on tape and reel. Its robust design supports a rated voltage of 8V and a current rating of 2.8A, making it suitable for demanding RF power amplification and switching in wireless communication systems and radar applications.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 4-SMD, Flat Leads |
| Current Rating (Amps) | 2.8A |
| Frequency | 1.9GHz |
| Power - Output | 32.5dBm |
| Gain | 10dB |
| Technology | GaAs HJ-FET |
| Noise Figure | - |
| Supplier Device Package | 79A |
| Voltage - Rated | 8 V |
| Voltage - Test | 3.5 V |
| Current - Test | 200 mA |
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