NE6510179A-A
RF MOSFET GAAS HJ-FET 3.5V 79AManufacturer: CEL
Categories: RF FETs, MOSFETs
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CEL's NE6510179A-A is a GaAs HJ-FET RF MOSFET designed for high-frequency applications. This component operates at a rated voltage of 8V and is tested at 3.5V, with a typical test current of 200mA. It delivers a gain of 10dB at 1.9GHz, a key parameter for signal amplification in RF front-ends. The device provides a power output of 32.5dBm, indicating its capability for robust signal transmission. Its 79A package (4-SMD, Flat Leads) is suitable for surface-mount assembly in demanding environments. This RF MOSFET finds application in various wireless communication systems, including cellular infrastructure and satellite communications, where efficient amplification at microwave frequencies is critical.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 4-SMD, Flat Leads |
| Current Rating (Amps) | 2.8A |
| Frequency | 1.9GHz |
| Power - Output | 32.5dBm |
| Gain | 10dB |
| Technology | GaAs HJ-FET |
| Noise Figure | - |
| Supplier Device Package | 79A |
| Voltage - Rated | 8 V |
| Voltage - Test | 3.5 V |
| Current - Test | 200 mA |
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