NE552R679A-T1A-A
RF MOSFET LDMOS 3V 79AManufacturer: CEL
Categories: RF FETs, MOSFETs
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CEL NE552R679A-T1A-A is an RF LDMOS transistor designed for high-frequency applications. This component operates at 3V with a nominal test current of 300mA, delivering a power output of 28dBm at 460MHz. Featuring a gain of 20dB, it is suitable for demanding RF power amplification stages. The device is housed in a 4-SMD, Flat Leads package and supplied on tape and reel. Its LDMOS technology ensures efficient performance in critical RF circuits, commonly found in wireless infrastructure, telecommunications, and broadcast systems. The CEL NE552R679A-T1A-A provides robust amplification characteristics for advanced RF designs.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 4-SMD, Flat Leads |
| Current Rating (Amps) | 350mA |
| Frequency | 460MHz |
| Power - Output | 28dbm |
| Gain | 20dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | 79A |
| Voltage - Rated | 3 V |
| Voltage - Test | 3 V |
| Current - Test | 300 mA |
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