NE552R679A-A
RF MOSFET LDMOS 3V 79AManufacturer: CEL
Categories: RF FETs, MOSFETs
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CEL NE552R679A-A is an RF LDMOS transistor designed for high-frequency applications. This component operates at 460MHz with a voltage rating of 3V. It exhibits a gain of 20dB and delivers 28dBm output power. Tested at 300mA, the device offers robust performance for demanding RF circuitry. The NE552R679A-A is supplied in a 79A package, suitable for bulk distribution and integration into various electronic systems. Its LDMOS technology ensures efficient power handling and linearity. This device finds application in wireless infrastructure, base stations, and other communication systems requiring reliable RF amplification.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 4-SMD, Flat Leads |
| Current Rating (Amps) | 350mA |
| Frequency | 460MHz |
| Power - Output | 28dbm |
| Gain | 20dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | 79A |
| Voltage - Rated | 3 V |
| Voltage - Test | 3 V |
| Current - Test | 300 mA |
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